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Joe Woods

Joe Woods

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ZVN2110A

Diodes Inc.

N-Channel 100 V 4 Ohm Enhancement Mode Vertical DMOS FET- TO-92

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Product Specifications for ZVN2110A

Type
Spec
Case/Package
TO-92-3
Continuous Drain Current (ID)
320 mA
Current Rating
230 mA
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
4 Ω
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
20 V
Height
4.01 mm
Input Capacitance
75 pF
Lead Free
Lead Free
Length
4.77 mm
Max Operating Temperature
150 °C
Max Power Dissipation
700 mW
Min Breakdown Voltage
100 V
Min Operating Temperature
-55 °C
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Number of Pins
3
Number of Terminals
3
Packaging
Bulk
Power Dissipation
700 mW
Radiation Hardening
No
Rds On Max
4 Ω
REACH SVHC
Affected
Resistance
4 Ω
Rise Time
8 ns
RoHS
Compliant
Schedule B
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Threshold Voltage
2.4 V
Turn-Off Delay Time
13 ns
Turn-On Delay Time
7 ns
Voltage Rating (DC)
100 V
Weight
0.45359237
Width
2.41 mm