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Joe Woods · Richmond, Virginia · USA
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ZTX857
Diodes Inc.
Power Bipolar Transistor, 3A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Product Specifications for ZTX857
Type
Spec
Case/Package
TO-92
Collector Base Voltage (VCBO)
330 V
Collector Emitter Breakdown Voltage
300 V
Collector Emitter Saturation Voltage
250 mV
Collector Emitter Voltage (VCEO)
300 V
Continuous Collector Current
3 A
Current Rating
5 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
80 MHz
Gain Bandwidth Product
80 MHz
Height
4.01 mm
hFE Min
100
Lead Free
Lead Free
Length
4.77 mm
Max Collector Current
3 A
Max Operating Temperature
200 °C
Max Power Dissipation
1.2 W
Min Operating Temperature
-55 °C
Mount
Through Hole
Number of Elements
1
Number of Pins
3
Number of Terminals
3
Packaging
Bulk
Polarity
NPN
Power Dissipation
1.2 W
Radiation Hardening
No
REACH SVHC
Affected
RoHS
Compliant
Transition Frequency
80 MHz
Voltage Rating (DC)
300 V
Weight
453.59237 mg
Width
2.41 mm