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Adam Sheehan · Richmond, Virginia · USA
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ZXTP2012ZTA
Diodes Inc.
Bipolar (BJT) Single Transistor, PNP, 80 V, 4.3 A, 1.5 W, SOT-89, Surface Mount
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Product Specifications for ZXTP2012ZTA
Type
Spec
Case/Package
SOT-89
Collector Base Voltage (VCBO)
-100 V
Collector Emitter Breakdown Voltage
-80 V
Collector Emitter Saturation Voltage
215 mV
Collector Emitter Voltage (VCEO)
60 V
Contact Plating
Tin
Continuous Collector Current
-4.3 A
Current
4 A
Current Rating
-4.3 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
-7 V
Frequency
120 MHz
Gain Bandwidth Product
120 MHz
Height
1.6 mm
hFE Min
10
Lead Free
Lead Free
Length
4.6 mm
Max Breakdown Voltage
60 V
Max Collector Current
4.3 A
Max Frequency
120 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.1 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Elements
1
Number of Pins
4
Number of Terminals
3
Packaging
Cut Tape
Polarity
PNP
Power Dissipation
1.5 W
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Schedule B
8541290080
Transition Frequency
120 MHz
Voltage
60 V
Voltage Rating (DC)
-60 V
Weight
51.993025 mg
Width
2.6 mm