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ZXMC3A16DN8TA
Diodes Inc.
Dual N & P Channel 30 V 6.4 A 2.1 W Surface Mount Complementary Mosfet - SOIC-8
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Product Specifications for ZXMC3A16DN8TA
Type
Spec
Case/Package
SOIC
Continuous Drain Current (ID)
4.9 A
Current Rating
6.4 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
35 mΩ
Drain to Source Voltage (Vdss)
30 V
Fall Time
9.4 ns
Gate to Source Voltage (Vgs)
20 V
Height
1.5 mm
Input Capacitance
796 pF
Lead Free
Lead Free
Length
5 mm
Max Operating Temperature
150 °C
Max Power Dissipation
2.1 W
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Number of Pins
8
Number of Terminals
8
Packaging
Cut Tape
Power Dissipation
2.1 W
Radiation Hardening
No
Rds On Max
35 mΩ
REACH SVHC
Yes
Resistance
48 mΩ
Rise Time
6.4 ns
RoHS
Compliant
Threshold Voltage
1 V
Turn-Off Delay Time
21.6 ns
Turn-On Delay Time
3 ns
Voltage Rating (DC)
30 V
Weight
73.992255 mg
Width
4 mm