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ZXMN4A06GTA
Diodes Inc.
Transistor: N-MOSFET; unipolar; 40V; 7A; 0.05ohm; 2W; -55+150 deg.C; SMD; SOT223
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Product Specifications for ZXMN4A06GTA
Type
Spec
Case/Package
SOT-223
Continuous Drain Current (ID)
5 A
Current Rating
6.7 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
50 mΩ
Drain to Source Voltage (Vdss)
40 V
Element Configuration
Single
Fall Time
7.35 ns
Gate to Source Voltage (Vgs)
20 V
Height
1.8 mm
Input Capacitance
770 pF
Length
6.7 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Breakdown Voltage
40 V
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Number of Pins
4
Number of Terminals
4
Packaging
Cut Tape
Power Dissipation
2 W
Radiation Hardening
No
Rds On Max
50 mΩ
REACH SVHC
No
Resistance
75 mΩ
Rise Time
4.45 ns
RoHS
Compliant
Schedule B
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Threshold Voltage
1 V
Turn-Off Delay Time
28.61 ns
Turn-On Delay Time
2.55 ns
Voltage Rating (DC)
40 V
Weight
7.994566 mg
Width
3.7 mm