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IRF6648TRPBF

Infineon

Single N-Channel 60 V 7 mOhm 50 nC HEXFET® Power Mosfet - DirectFET®

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Carlos Stoop

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+1 (415) 906-1737

Carlos StoopRichmond, VirginiaUSA

Next Available 9 a.m. Eastern

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Product Specifications for IRF6648TRPBF

Type
Spec
Continuous Drain Current (ID)
86 A
Current Rating
86 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
5.5 mΩ
Drain to Source Voltage (Vdss)
60 V
Fall Time
13 ns
Gate to Source Voltage (Vgs)
20 V
Height
700 µm
Input Capacitance
2.12 nF
Lead Free
Lead Free
Length
5.45 mm
Manufacturer Package Identifier
MG-WDSON-5
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.8 W
Min Operating Temperature
-40 °C
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Number of Pins
5
On-State Resistance
7 mΩ
Package Quantity
4800
Packaging
Tape & Reel
Power Dissipation
2.8 W
Radiation Hardening
No
Rds On Max
7 mΩ
REACH SVHC
No
Rise Time
29 ns
RoHS
Compliant
Schedule B
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Threshold Voltage
4 V
Turn-Off Delay Time
28 ns
Turn-On Delay Time
16 ns
Voltage Rating (DC)
60 V
Width
5.05 mm

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