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Adam Sheehan

Adam Sheehan

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WSJM65R120XQ

WeEn Semiconductors

Power Field-Effect Transistor, 30A I(D), 650V, 0.12ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET,...

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Product Specifications for WSJM65R120XQ

Type
Spec
Continuous Drain Current (ID)
30 A
Drain to Source Resistance
120 mΩ
Max Operating Temperature
150 °C
Max Power Dissipation
36 W
Min Breakdown Voltage
650 V
Min Operating Temperature
-55 °C
Number of Elements
1
Number of Terminals
3
REACH SVHC
Unaffected
RoHS
Compliant