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WSJT65R075DWQ
WeEn Semiconductors
Power Field-Effect Transistor, 50A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-247
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Product Specifications for WSJT65R075DWQ
Type
Spec
Continuous Drain Current (ID)
50 A
Drain to Source Resistance
70 mΩ
Max Operating Temperature
150 °C
Max Power Dissipation
481 W
Min Breakdown Voltage
650 V
Min Operating Temperature
-55 °C
Number of Elements
1
Number of Terminals
3