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Joe Woods

Joe Woods

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ZXMN10A11GTA

Diodes Inc.

ZXMN10A11G Series 100 V 0.35 Ohm N-Channel Enhancement Mode MOSFET -SOT-223

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Product Specifications for ZXMN10A11GTA

Type
Spec
Case/Package
SOT-223
Continuous Drain Current (ID)
1.9 A
Current Rating
1 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
350 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
3.5 ns
Gate to Source Voltage (Vgs)
20 V
Height
1.65 mm
Input Capacitance
274 pF
Length
6.7 mm
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Military Standard
MIL-STD-202
Min Breakdown Voltage
100 V
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Number of Terminals
4
Radiation Hardening
No
Rds On Max
350 mΩ
REACH SVHC
No
Resistance
350 mΩ
Rise Time
1.7 ns
RoHS
Compliant
Schedule B
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Turn-Off Delay Time
7.4 ns
Turn-On Delay Time
2.7 ns
Voltage Rating (DC)
100 V
Weight
7.994566 mg
Width
3.7 mm