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Joe Woods · Richmond, Virginia · USA
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ZXTN2010ZTA
Diodes Inc.
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Product Specifications for ZXTN2010ZTA
Type
Spec
Case/Package
SOT-89
Collector Base Voltage (VCBO)
150 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
230 mV
Collector Emitter Voltage (VCEO)
60 V
Contact Plating
Tin
Continuous Collector Current
5 A
Current Rating
5 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
7 V
Frequency
130 MHz
Gain Bandwidth Product
130 MHz
Height
1.6 mm
hFE Min
20
Lead Free
Lead Free
Length
4.6 mm
Max Breakdown Voltage
60 V
Max Collector Current
5 A
Max Frequency
130 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.1 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Elements
1
Number of Pins
4
Number of Terminals
3
Packaging
Cut Tape
Polarity
NPN
Power Dissipation
1.5 W
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Schedule B
8541290080
Transition Frequency
130 MHz
Voltage Rating (DC)
60 V
Weight
51.993025 mg
Width
2.6 mm