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WSJM65R360Q
WeEn Semiconductors
Power Field-Effect Transistor, 12A I(D), 650V, 0.36ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET,...

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Product Specifications for WSJM65R360Q
Type
Spec
Continuous Drain Current (ID)
12 A
Drain to Source Resistance
360 mΩ
Max Operating Temperature
150 °C
Max Power Dissipation
139 W
Min Breakdown Voltage
650 V
Min Operating Temperature
-55 °C
Number of Elements
1
Number of Terminals
3
REACH SVHC
Unaffected
RoHS
Compliant