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Adam Sheehan

Adam Sheehan

Next Available 9 a.m. Eastern
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BD682G

onsemi

4.0 A, 100 V PNP Darlington Bipolar Power Transistor

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Product Specifications for BD682G

Type
Spec
Case/Package
TO-225
Collector Base Voltage (VCBO)
100 V
Collector Emitter Breakdown Voltage
100 V
Collector Emitter Saturation Voltage
2.5 V
Collector Emitter Voltage (VCEO)
100 V
Contact Plating
Tin
Continuous Collector Current
4 A
Current Rating
4 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Halogen Free
Halogen Free
Height
13.64 mm
hFE Min
750
Lead Free
Lead Free
Length
6.35 mm
Max Collector Current
4 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
40 W
Min Operating Temperature
-55 °C
Number of Elements
1
Number of Pins
3
Number of Terminals
3
Packaging
Bulk
Polarity
PNP
Power Dissipation
40 W
Radiation Hardening
No
REACH SVHC
No
RoHS
Compliant
Schedule B
8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Voltage Rating (DC)
-100 V
Weight
4.535924 g
Width
6.35 mm