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K4T1G084QE-HCE6
Samsung
Ddr Dram, 128MX8, 0.45NS, Cmos, PBGA60, Halogen Free And Rohs Compliant, FBGA-60
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Product Specifications for K4T1G084QE-HCE6
Type
Spec
Access Time
450 ps
Case/Package
TFBGA
Height - Seated (Max)
1.2 mm
Length
9.5 mm
Max Frequency
333 MHz
Max Operating Temperature
85 °C
Max Supply Current
155 mA
Max Supply Voltage
1.9 V
Min Operating Temperature
0 °C
Min Supply Voltage
1.7 V
Number of Circuits
1
Number of Ports
1
Number of Terminals
60
Operating Supply Voltage
1.8 V
RoHS
Compliant
Terminal Pitch
800 µm
Width
7.5 mm